 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Previous Datasheet Index Next Data Sheet PD - 5.023B CPV363MF IGBT SIP MODULE Features * * * * Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses TM HEXFRED soft ultrafast diodes Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve 3 Q1 D1 9 4 6 Q2 D2 12 Q4 D4 18 Q3 1 Fast IGBT D3 15 Q5 D5 16 D6 10 Q6 Product Summary 7 13 19 Output Current in a Typical 5.0 kHz Motor Drive 7.65 ARMS per phase (2.4 kW total) with TC = 90C, TJ = 125C, Supply Voltage 360Vdc, Power Factor 0.8, Modulation Depth 80% (See Figure 1) Description The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium. IMS-2 Max. Units V Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE VISOL PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 min. Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. 600 16 8.7 50 50 6.1 50 20 2500 36 14 -40 to +150 300 (0.063 in. (1.6mm) from case) 5-7 lbf*in (0.55-0.8 N*m) A V VRMS W C Thermal Resistance Parameter RJC (IGBT) RJC (DIODE) RCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module Typ. -- -- 0.1 20 (0.7) Max. 3.5 5.5 -- -- Units C/W g (oz) Revision 1 C-149 To Order Previous Datasheet Index Next Data Sheet CPV363MF Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES VFM IGES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, IC = 250A -- 0.69 -- V/C VGE = 0V, IC = 1.0mA -- 1.5 1.6 IC = 8.7A VGE = 15V -- 1.9 -- V IC = 16A See Fig. 2, 5 -- 1.6 -- IC = 8.7A, TJ = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 6.0 8.0 -- S VCE = 100V, IC = 8.7A -- -- 250 A VGE = 0V, VCE = 600V -- -- 2500 VGE = 0V, VCE = 600V, TJ = 150C -- 1.4 1.7 V IC = 12A See Fig. 13 -- 1.3 1.6 IC = 12A, TJ = 150C -- -- 500 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 23 2.4 9.2 25 21 210 300 0.44 2.0 2.4 25 21 280 550 3.4 670 100 10 42 80 3.5 5.6 80 220 180 116 Max. Units Conditions 30 IC = 16A 5.9 nC VCC = 400V 15 See Fig. 8 -- TJ = 25C -- ns IC = 8.7A, VCC = 480V 300 VGE = 15V, RG = 23 450 Energy losses include "tail" and -- diode reverse recovery -- mJ See Fig. 9, 10, 11, 18 3.2 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 8.7A, VCC = 480V -- VGE = 15V, RG = 23 -- Energy losses include "tail" and -- mJ diode reverse recovery -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 60 ns TJ = 25C See Fig. 120 TJ = 125C 14 IF = 12A 6.0 A TJ = 25C See Fig. 10 TJ = 125C 15 V R = 200V 180 nC TJ = 25C See Fig. 600 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17 Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) VCC=80%(VCES), VGE=20V, L=10H, RG= 23, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-150 To Order Previous Datasheet Index Next Data Sheet CPV363MF 12 3.7 9 2.8 Total O utpu t P ow e r (kW ) Lo ad C urrent (A ) 6 1.9 S 3 TC = 90C TJ = 125C Power Factor = 0.8 Modulation Depth = 0.8 VC C = 60% of Rated Voltage 0.1 1 10 100 0.9 0 0 f, F re quenc y (kH z) Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave 1000 10 00 I C , C ollector-to-E mitter C urrent (A ) IC , C ollector-to-E m itter Current (A ) TJ = 25 C 100 1 00 T J = 15 0C 10 TJ = 15 0C T J = 25 C 1 10 1 1 V G E = 1 5V 2 0 s P U LS E W IDTH 10 0.1 5 10 V C C = 1 00 V 5 s P UL S E W ID TH 15 20 V C E , C ollector-to-E m itter V oltage (V ) V G E , G ate-to-E m itter V olta g e (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-151 To Order Previous Datasheet Index Next Data Sheet CPV363MF 40 V G E = 15 V 3.5 VG E = 1 5 V 80 s P UL S E W ID TH I C = 34 A V C E , C ollector-to-E m itter V oltage (V ) Maxim um D C Collector C urrent (A ) 3.0 30 2.5 20 I C = 17 A 2.0 10 1.5 I C = 8.5A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem perature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 The rm al R espo nse (Z th JC ) D = 0 .5 0 1 0.2 0 0.1 0 0 .05 0.1 0.0 2 0.0 1 S ING L E PU LS E (TH E R MAL RE S PO N SE ) N o te s : 1 . D u ty fa c to r D = t 1 /t PD M t 1 t2 2 0.01 0.00001 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case C-152 To Order Previous Datasheet Index Next Data Sheet CPV363MF 1 4 00 C , C a pac itanc e (pF ) 1 0 00 Cies 8 00 Coes 6 00 V G E , G ate-to-E m itter V oltage (V) 10 0 1 2 00 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 40 0 V I C = 1 7A 16 12 8 4 00 Cres 2 00 4 0 1 10 0 0 5 10 15 20 25 30 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2.7 10 2.6 To ta l S w itc hing Lo sse s (m J) T o ta l S w itc h in g L o s s e s (m J) VC C VG E TC IC = 48 0V = 1 5V = 25C = 17 A I C = 3 4A 2.5 I C = 1 7A 2.4 I C = 8.5A 2.3 2.2 0 10 20 30 40 50 60 1 -60 -40 -20 0 20 40 60 80 R G = 23 V GE = 1 5V V CC = 48 0V 1 00 120 140 160 R G , G a te R e s is ta n c e ( ) W TC , C a se T e m p e ra tu re (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-153 To Order Previous Datasheet Index Next Data Sheet CPV363MF 10 8 I C , C o lle cto r-to -E m itte r C u rre n t (A ) T o ta l S w itc h in g L o s s e s (m J ) RG TC VCC VGE = 23 = 1 50C = 48 0V = 1 5V 1000 VG E E 20 V G= T J = 125 C 100 S A FE O P E RA TIN G A RE A 6 10 4 2 0 10 20 30 40 1 1 10 100 1000 I C , C o lle c to r-to -E m itte r C u rre n t (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) TJ = 150C 10 TJ = 125C TJ = 25C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current C-154 To Order Previous Datasheet Index Next Data Sheet CPV363MF 160 100 VR = 200V TJ = 125C TJ = 25C 120 VR = 200V TJ = 125C TJ = 25C IF = 24A I F = 12A 80 I IRRM - (A) I F = 24A 10 t rr - (ns) I F = 12A IF = 6.0A IF = 6.0A 40 0 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. di/dt f Fig. 15 - Typical Recovery Current vs. di/dt f 600 10000 VR = 200V TJ = 125C TJ = 25C VR = 200V TJ = 125C TJ = 25C 400 di(rec)M/dt - (A/s) 1000 Q RR - (nC) IF = 6.0A I F = 24A I F = 12A IF = 12A 100 200 IF = 6.0A IF = 24A 0 100 di f /dt - (A/s) 1000 10 100 1000 di f /dt - (A/s) Fig. 16 - Typical Stored Charge vs. di/dt f C-155 Fig. 17 - Typical di(rec)M/dt vs. dif/dt To Order Previous Datasheet Index Next Data Sheet CPV363MF 90% Vge +Vge Same type device as D.U.T. Ic 430F D.U.T. td(off) 10% Vce Vce 90% Ic Ic 5% Ic 80% of Vce tf Eoff = t1+5S Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 10% Irr Vcc Vpk Irr trr Ic Qrr = trr id dt tx t4 Erec = Vd id dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr Refer to Section D for the following: Appendix D: Section D - page D-6 Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a Fig. 19 - Clamped Inductive Load Test Circuit Fig. 20 - Pulsed Collector Current Test Circuit Package Outline 5 - IMS-2 Package (13 pins) Section D - page D-14 C-156 To Order |
Price & Availability of CPV363MF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |